STP80N6F6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 60V 110A TO220
$2.57
Available to order
Reference Price (USD)
1+
$1.90000
50+
$1.53700
100+
$1.35600
500+
$1.07160
Exquisite packaging
Discount
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The STP80N6F6 from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the STP80N6F6 offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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