DMN4468LSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET N CH 30V 10A 8SOP
$0.48
Available to order
Reference Price (USD)
2,500+
$0.18098
5,000+
$0.17053
12,500+
$0.16008
25,000+
$0.15276
62,500+
$0.15200
Exquisite packaging
Discount
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Discover the DMN4468LSS-13 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMN4468LSS-13 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 11.6A, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.52W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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