BSZ15DC02KDHXTMA1
Infineon Technologies
Infineon Technologies
MOSFET N/P-CH 20V 5.1/3.2A TDSON
$1.50
Available to order
Reference Price (USD)
5,000+
$0.43890
10,000+
$0.42240
Exquisite packaging
Discount
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The BSZ15DC02KDHXTMA1 by Infineon Technologies is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the BSZ15DC02KDHXTMA1 offers superior functionality and longevity. Trust Infineon Technologies to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TSDSON-8-FL
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