BSZ215CHXTMA1
Infineon Technologies
Infineon Technologies
MOSFET N/P-CH 20V 8TSDSON
$1.75
Available to order
Reference Price (USD)
5,000+
$0.51205
Exquisite packaging
Discount
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Optimize your electronic projects with the BSZ215CHXTMA1 from Infineon Technologies, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the BSZ215CHXTMA1 ensures top-notch performance. Infineon Technologies's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TSDSON-8
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