Shopping cart

Subtotal: $0.00

BUK653R4-40C,127

NXP USA Inc.
BUK653R4-40C,127 Preview
NXP USA Inc.
MOSFET N-CH 40V 100A TO220AB
$0.70
Available to order
Reference Price (USD)
1+
$0.70000
500+
$0.693
1000+
$0.686
1500+
$0.679
2000+
$0.672
2500+
$0.665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 204W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

Related Products

Rohm Semiconductor

RSH070P05TB1

Rohm Semiconductor

US5U38TR

Vishay Siliconix

SQJ457EP-T1_BE3

Sanken

FKV575

Rectron USA

RM8N650T2

Infineon Technologies

IRFZ44VZPBF

Top