BUK6Y14-40PX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 40V 64A LFPAK56
$1.21
Available to order
Reference Price (USD)
1+
$1.21000
500+
$1.1979
1000+
$1.1858
1500+
$1.1737
2000+
$1.1616
2500+
$1.1495
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the BUK6Y14-40PX by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BUK6Y14-40PX stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 110W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Infineon Technologies
IPP65R420CFDXKSA1
Infineon Technologies
IPA65R660CFDXKSA2
Infineon Technologies
IPB038N12N3GATMA1
Panjit International Inc.
PJL9411_R2_00001
Renesas Electronics America Inc
NP75N04YUG-E1-AY
Toshiba Semiconductor and Storage
SSM3J135TU,LF
Microchip Technology
VN2210N3-G
Toshiba Semiconductor and Storage
SSM3K56CT,L3F
Diodes Incorporated
DMT6012LFV-7
onsemi