BUK7907-55ATE127
Nexperia USA Inc.
Nexperia USA Inc.
N-CHANNEL POWER MOSFET
$1.04
Available to order
Reference Price (USD)
1+
$1.04000
500+
$1.0296
1000+
$1.0192
1500+
$1.0088
2000+
$0.9984
2500+
$0.988
Exquisite packaging
Discount
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Enhance your electronic projects with the BUK7907-55ATE127 single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s BUK7907-55ATE127 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 272W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-5
- Package / Case: TO-220-5
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