BUK7E4R0-80E,127
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 80V 120A I2PAK
$1.25
Available to order
Reference Price (USD)
1+
$1.25000
500+
$1.2375
1000+
$1.225
1500+
$1.2125
2000+
$1.2
2500+
$1.1875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK7E4R0-80E,127 from NXP USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to NXP USA Inc.'s BUK7E4R0-80E,127 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12030 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Nexperia USA Inc.
PXN9R0-30QLJ
onsemi
FDC2512
Infineon Technologies
BSS84PWH6327XTSA1
Panjit International Inc.
PJP18N20_T0_00001
GeneSiC Semiconductor
G3R160MT17D
Alpha & Omega Semiconductor Inc.
AOT27S60L
IXYS
IXTH96P085T
Vishay Siliconix
SQ2309ES-T1_GE3
Infineon Technologies
IPZA60R045P7XKSA1
onsemi