IPZA60R045P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 61A TO247-4-3
$9.09
Available to order
Reference Price (USD)
1+
$9.08821
500+
$8.9973279
1000+
$8.9064458
1500+
$8.8155637
2000+
$8.7246816
2500+
$8.6337995
Exquisite packaging
Discount
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Upgrade your designs with the IPZA60R045P7XKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPZA60R045P7XKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.08mA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 201W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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