BUK96180-100A,118
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 100V 11A D2PAK
$0.27
Available to order
Reference Price (USD)
800+
$0.49521
1,600+
$0.44748
2,400+
$0.41765
5,600+
$0.39677
20,000+
$0.38185
Exquisite packaging
Discount
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Upgrade your designs with the BUK96180-100A,118 by NXP USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BUK96180-100A,118 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 54W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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