BUK9M35-80EX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V 26A LFPAK33
$0.93
Available to order
Reference Price (USD)
1,500+
$0.27949
3,000+
$0.25329
7,500+
$0.23582
10,500+
$0.22708
37,500+
$0.22232
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK9M35-80EX from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s BUK9M35-80EX for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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