BUK9Y3R0-40E,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
$1.65
Available to order
Reference Price (USD)
1,500+
$0.49500
3,000+
$0.46200
7,500+
$0.43890
10,500+
$0.42240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK9Y3R0-40E,115 from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s BUK9Y3R0-40E,115 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 194W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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