BVSS123LT1G
onsemi
onsemi
MOSFET N-CH 100V 170MA SOT23-3
$0.41
Available to order
Reference Price (USD)
3,000+
$0.09812
6,000+
$0.09291
15,000+
$0.08508
30,000+
$0.07987
75,000+
$0.07205
150,000+
$0.07063
Exquisite packaging
Discount
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Optimize your power electronics with the BVSS123LT1G single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BVSS123LT1G combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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