SI4100DY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 6.8A 8SO
$1.38
Available to order
Reference Price (USD)
2,500+
$0.62320
5,000+
$0.59394
12,500+
$0.57304
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SI4100DY-T1-E3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SI4100DY-T1-E3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IPD50N12S3L15ATMA1
IXYS
IXTA12N65X2
onsemi
FDC8601
onsemi
FCP190N60-GF102
Rohm Semiconductor
R6077VNZ4C13
Vishay Siliconix
SI3127DV-T1-GE3
IXYS
IXFT16N120P
Infineon Technologies
IRLU7843PBF
Infineon Technologies
IPP032N06N3GXKSA1
Rohm Semiconductor