RCJ451N20TL
Rohm Semiconductor
Rohm Semiconductor
200V 45A, NCH, TO-263S, POWER MO
$4.55
Available to order
Reference Price (USD)
1+
$4.55000
500+
$4.5045
1000+
$4.459
1500+
$4.4135
2000+
$4.368
2500+
$4.3225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the RCJ451N20TL by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The RCJ451N20TL stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 211W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263S
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STLD125N4F6AG
Panjit International Inc.
PJD25N06A-AU_L2_000A1
Renesas Electronics America Inc
RJK1051DPB-00#J5
STMicroelectronics
STP20NM50
onsemi
NTD5867NLT4G
Goford Semiconductor
GT095N10K
Vishay Siliconix
SIHP125N60EF-GE3
Infineon Technologies
IRF6636TRPBF
IXYS
IXFK240N15T2
STMicroelectronics