Shopping cart

Subtotal: $0.00

BYT51D-TAP

Vishay General Semiconductor - Diodes Division
BYT51D-TAP Preview
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 1.5A SOD57
$0.64
Available to order
Reference Price (USD)
25,000+
$0.18200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-57, Axial
  • Supplier Device Package: SOD-57
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-20ETS12FP-M3

Taiwan Semiconductor Corporation

1N4148WS RRG

Panjit International Inc.

BR310F_R1_00001

Nexperia USA Inc.

PMEG4010CEGW,115

Toshiba Semiconductor and Storage

TRS2E65F,S1Q

Vishay General Semiconductor - Diodes Division

VS-86HFR40

Microchip Technology

JAN1N5811US

Diotec Semiconductor

AL1A-CT

Microchip Technology

SBR6030L

Top