BYV26E-TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1000V 1A SOD57
$0.74
Available to order
Reference Price (USD)
5,000+
$0.21000
Exquisite packaging
Discount
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Enhance your circuit performance with the BYV26E-TR single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the BYV26E-TR delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Vishay General Semiconductor - Diodes Division's BYV26E-TR is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: SOD-57, Axial
- Supplier Device Package: SOD-57
- Operating Temperature - Junction: -55°C ~ 175°C
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