BYVF32-100HE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 18A ITO220AB
$1.07
Available to order
Reference Price (USD)
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$1.07250
500+
$1.061775
1000+
$1.05105
1500+
$1.040325
2000+
$1.0296
2500+
$1.018875
Exquisite packaging
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The BYVF32-100HE3_A/P from Vishay General Semiconductor - Diodes Division is a standout in the Discrete Semiconductor Products family, offering unmatched rectification efficiency in compact diode arrays. Designed for high-density PCB layouts, this product excels in bridge rectifiers and polarity protection circuits. Its low leakage current and high-temperature stability make it a favorite for telecommunications, consumer electronics, and medical devices. Choose Vishay General Semiconductor - Diodes Division's BYVF32-100HE3_A/P for applications where space-saving design meets industrial-grade reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 18A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
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