CLF1G0035-100P
NXP USA Inc.
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
$202.54
Available to order
Reference Price (USD)
1+
$202.54000
500+
$200.5146
1000+
$198.4892
1500+
$196.4638
2000+
$194.4384
2500+
$192.413
Exquisite packaging
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As a leading solution in the Discrete Semiconductor Products market, the CLF1G0035-100P RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The CLF1G0035-100P's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the CLF1G0035-100P provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 3.5GHz
- Gain: 12.5dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 330 mA
- Power - Output: 100W
- Voltage - Rated: 150 V
- Package / Case: SOT-1228A
- Supplier Device Package: LDMOST
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