CLF1G0060S-10
NXP USA Inc.
NXP USA Inc.
RF PFET, 1-ELEMENT, C BAND, GALL
$77.25
Available to order
Reference Price (USD)
1+
$77.25000
500+
$76.4775
1000+
$75.705
1500+
$74.9325
2000+
$74.16
2500+
$73.3875
Exquisite packaging
Discount
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Discover the CLF1G0060S-10, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The CLF1G0060S-10 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the CLF1G0060S-10 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 6GHz
- Gain: 16dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 50 mA
- Power - Output: 10W
- Voltage - Rated: 150 V
- Package / Case: SOT-1227B
- Supplier Device Package: SOT1227B
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