CPC5602CTR
IXYS Integrated Circuits Division
IXYS Integrated Circuits Division
MOSFET N-CH 350V 5MA SOT-223
$1.01
Available to order
Reference Price (USD)
1,000+
$0.32000
2,000+
$0.29000
5,000+
$0.28000
Exquisite packaging
Discount
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Meet the CPC5602CTR by IXYS Integrated Circuits Division, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The CPC5602CTR stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS Integrated Circuits Division.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350 V
- Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0.35V
- Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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