IRF9610SPBF
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 200V 1.8A D2PAK
$2.04
Available to order
Reference Price (USD)
1+
$2.21000
10+
$2.00300
100+
$1.62230
500+
$1.27576
1,000+
$1.06785
3,000+
$0.99855
5,000+
$0.96390
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IRF9610SPBF single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's IRF9610SPBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 20W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
FQPF27N25
Renesas Electronics America Inc
RJK6026DPP-B1#T2F
Vishay Siliconix
IRFBE30SPBF
STMicroelectronics
STD3NK60Z-1
Infineon Technologies
IRF8714TRPBF
Texas Instruments
CSD17556Q5BT
Panjit International Inc.
2N7002KW_R1_00001
onsemi
NTTFS5826NLTAG
Infineon Technologies
BSC886N03LSG
Fairchild Semiconductor