CSD17556Q5B
Texas Instruments
Texas Instruments
MOSFET N-CH 30V 34A/100A 8VSON
$2.62
Available to order
Reference Price (USD)
1+
$2.62000
500+
$2.5938
1000+
$2.5676
1500+
$2.5414
2000+
$2.5152
2500+
$2.489
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the CSD17556Q5B by Texas Instruments, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the CSD17556Q5B is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 1.65V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 191W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
Related Products
STMicroelectronics
STW48NM60N
STMicroelectronics
STW65N60DM6
Vishay Siliconix
IRFR110TRPBF-BE3
Infineon Technologies
IPA60R950C6XKSA1
Nexperia USA Inc.
BUK964R1-40E,118
NTE Electronics, Inc
NTE2371
Infineon Technologies
BSS314PEH6327XTSA1
Toshiba Semiconductor and Storage
TK49N65W5,S1F
Harris Corporation
RF1S9540
Infineon Technologies