CSD25304W1015
Texas Instruments
Texas Instruments
MOSFET P-CH 20V 3A 6DSBGA
$0.21
Available to order
Reference Price (USD)
1+
$0.20631
500+
$0.2042469
1000+
$0.2021838
1500+
$0.2001207
2000+
$0.1980576
2500+
$0.1959945
Exquisite packaging
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Optimize your power electronics with the CSD25304W1015 single MOSFET from Texas Instruments. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the CSD25304W1015 combines cutting-edge technology with Texas Instruments's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DSBGA (1x1.5)
- Package / Case: 6-UFBGA, DSBGA
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