CSD25501F3
Texas Instruments
Texas Instruments
MOSFET P-CH 20V 3.6A 3LGA
$0.10
Available to order
Reference Price (USD)
1+
$0.10472
500+
$0.1036728
1000+
$0.1026256
1500+
$0.1015784
2000+
$0.1005312
2500+
$0.099484
Exquisite packaging
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Meet the CSD25501F3 by Texas Instruments, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The CSD25501F3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Texas Instruments.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V
- Vgs (Max): -20V
- Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-LGA (0.73x0.64)
- Package / Case: 3-XFLGA
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