Shopping cart

Subtotal: $0.00

SI4874BDY-T1-E3

Vishay Siliconix
SI4874BDY-T1-E3 Preview
Vishay Siliconix
MOSFET N-CH 30V 12A 8SO
$1.46
Available to order
Reference Price (USD)
2,500+
$0.54481
5,000+
$0.51923
12,500+
$0.50096
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

Related Products

Infineon Technologies

IPP100N06S205AKSA1

Rohm Semiconductor

RVQ040N05TR

NXP USA Inc.

BUK6507-55C,127

Rohm Semiconductor

RD3U080CNTL1

Infineon Technologies

IRF8010STRLPBF

Rectron USA

RM2N650IP

Panasonic Electronic Components

FK4B01120L1

Nexperia USA Inc.

PSMN1R5-30YL,115

Nexperia USA Inc.

PSMN012-100YLX

Top