PSMN1R5-30YL,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
$1.86
Available to order
Reference Price (USD)
1,500+
$0.49764
3,000+
$0.46446
7,500+
$0.44124
10,500+
$0.42465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the PSMN1R5-30YL,115 single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s PSMN1R5-30YL,115 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 109W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Nexperia USA Inc.
PSMN012-100YLX
Infineon Technologies
SPD04N60C3ATMA1
Vishay Siliconix
IRFI630GPBF
Panjit International Inc.
PJQ5472A_R2_00001
Vishay Siliconix
IRF830STRLPBF
onsemi
FQP4P40
Nexperia USA Inc.
PSMN2R0-30YL,115
Alpha & Omega Semiconductor Inc.
AON3402
Vishay Siliconix
SIHFBF30S-GE3
STMicroelectronics