SPD04N60C3ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 4.5A TO252-3
$2.28
Available to order
Reference Price (USD)
2,500+
$0.75052
5,000+
$0.72272
12,500+
$0.70756
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SPD04N60C3ATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SPD04N60C3ATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
IRFI630GPBF
Panjit International Inc.
PJQ5472A_R2_00001
Vishay Siliconix
IRF830STRLPBF
onsemi
FQP4P40
Nexperia USA Inc.
PSMN2R0-30YL,115
Alpha & Omega Semiconductor Inc.
AON3402
Vishay Siliconix
SIHFBF30S-GE3
STMicroelectronics
STL70N4LLF5
Texas Instruments
CSD16342Q5A
Renesas Electronics America Inc