RM2N650IP
Rectron USA
Rectron USA
MOSFET N-CHANNEL 650V 2A TO251
$0.30
Available to order
Reference Price (USD)
1+
$0.30000
500+
$0.297
1000+
$0.294
1500+
$0.291
2000+
$0.288
2500+
$0.285
Exquisite packaging
Discount
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Discover the RM2N650IP from Rectron USA, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RM2N650IP ensures reliable performance in demanding environments. Upgrade your circuit designs with Rectron USA's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 23W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Stub Leads, IPak
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