CSD85312Q3E
Texas Instruments
Texas Instruments
MOSFET 2N-CH 20V 39A 8VSON
$1.34
Available to order
Reference Price (USD)
2,500+
$0.38220
Exquisite packaging
Discount
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Enhance your circuit designs with the CSD85312Q3E, a premium Transistors - FETs, MOSFETs - Arrays product from Texas Instruments. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the CSD85312Q3E delivers consistent and reliable operation. Texas Instruments's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Logic Level Gate, 5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-VSON (3.3x3.3)
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