ZXMC3A16DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V 8SOIC
$1.52
Available to order
Reference Price (USD)
500+
$0.91600
1,000+
$0.74000
2,500+
$0.69600
5,000+
$0.66520
12,500+
$0.64320
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the ZXMC3A16DN8TA from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the ZXMC3A16DN8TA stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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