PMDPB95XNE,115
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 30V 2.4A HUSON6
$0.06
Available to order
Reference Price (USD)
1+
$0.06000
500+
$0.0594
1000+
$0.0588
1500+
$0.0582
2000+
$0.0576
2500+
$0.057
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic projects with the PMDPB95XNE,115 from NXP USA Inc., a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the PMDPB95XNE,115 ensures top-notch performance. NXP USA Inc.'s expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.4A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V
- Power - Max: 475mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
Related Products
Diodes Incorporated
DMG6602SVTX-7
Diodes Incorporated
DMC67D8UFDBQ-7
Fairchild Semiconductor
SI4920DY
Alpha & Omega Semiconductor Inc.
AO4892
Nexperia USA Inc.
PMCXB1000UEZ
Alpha & Omega Semiconductor Inc.
AO4627
Panjit International Inc.
PJX8812_R1_00001
onsemi
EMH2408-TL-H
onsemi
FDS6875
onsemi