PJX8812_R1_00001
Panjit International Inc.
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
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The PJX8812_R1_00001 from Panjit International Inc. is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the PJX8812_R1_00001 provides reliable performance in demanding environments. Choose Panjit International Inc. for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
- Power - Max: 300mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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