PMCXB1000UEZ
Nexperia USA Inc.

Nexperia USA Inc.
MOSFET N/P-CH 30V DFN1010B-6
$0.53
Available to order
Reference Price (USD)
5,000+
$0.20295
10,000+
$0.19085
25,000+
$0.18238
50,000+
$0.18150
Exquisite packaging
Discount
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Discover the high-performance PMCXB1000UEZ from Nexperia USA Inc., a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the PMCXB1000UEZ delivers unmatched performance. Trust Nexperia USA Inc.'s cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta)
- Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V
- Power - Max: 285mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6