CSD86330Q3D
Texas Instruments
Texas Instruments
MOSFET 2N-CH 25V 20A 8LSON
$2.32
Available to order
Reference Price (USD)
2,500+
$0.86800
Exquisite packaging
Discount
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Choose the CSD86330Q3D from Texas Instruments for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the CSD86330Q3D stands out for its reliability and efficiency. Texas Instruments's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 14A, 8V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 12.5V
- Power - Max: 6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: 8-LSON (3.3x3.3)
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