DCX123JU-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP PREBIAS SOT363
$0.37
Available to order
Reference Price (USD)
3,000+
$0.06538
6,000+
$0.05750
15,000+
$0.04963
30,000+
$0.04700
75,000+
$0.04438
150,000+
$0.04000
Exquisite packaging
Discount
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The DCX123JU-7-F by Diodes Incorporated is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. Diodes Incorporated's state-of-the-art production facilities ensure that the DCX123JU-7-F delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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