DDC113TU-7-F
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN PREBIAS 0.2W SOT363
$0.08
Available to order
Reference Price (USD)
3,000+
$0.07560
6,000+
$0.06804
15,000+
$0.06048
30,000+
$0.05670
75,000+
$0.05040
Exquisite packaging
Discount
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The DDC113TU-7-F from Diodes Incorporated represents the pinnacle of pre-biased BJT array technology. Designed for high-density circuits, this product features low on-resistance and fast switching speeds, ideal for digital and analog applications. Its robust construction ensures reliable operation in telecommunications, computing, and industrial machinery. Diodes Incorporated's expertise in semiconductor manufacturing guarantees that the DDC113TU-7-F meets the highest industry standards. Whether you're designing advanced control systems or simple electronic switches, this transistor array offers unparalleled performance and versatility.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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