PBLS1503V,115-NXP
NXP USA Inc.
NXP USA Inc.
0.1A 50V 2-ELEMENT NPN AND PNP
$0.07
Available to order
Reference Price (USD)
1+
$0.07000
500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the versatility of NXP USA Inc.'s PBLS1503V,115-NXP, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The PBLS1503V,115-NXP is widely used in IoT devices, medical equipment, and renewable energy systems. NXP USA Inc.'s advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the PBLS1503V,115-NXP offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 15V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, 200 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 280MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
onsemi
NSBC123JPDXV6T1G
onsemi
EMF5XV6T5
onsemi
NSVBC143TPDXV6T1G
NXP USA Inc.
PEMH17,115
Panasonic Electronic Components
XP0431500L
Toshiba Semiconductor and Storage
RN4904,LXHF(CT
onsemi
NSBC114EDP6T5G
Nexperia USA Inc.
PIMP32-QX
Toshiba Semiconductor and Storage
RN1601(TE85L,F)
Nexperia USA Inc.