DDTC114TCA-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
$0.04
Available to order
Reference Price (USD)
3,000+
$0.04184
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineers choose DDTC114TCA-7-F for its exceptional linearity in amplification circuits. Diodes Incorporated's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
Nexperia USA Inc.
NHDTC114YUX
NXP USA Inc.
PDTA124XE,115
Toshiba Semiconductor and Storage
RN1110,LF(CT
Toshiba Semiconductor and Storage
RN2311,LXHF
Toshiba Semiconductor and Storage
RN2427TE85LF
Rohm Semiconductor
DTA144WUAT106
Rohm Semiconductor
DTC115GKAT146
Rohm Semiconductor
DTC623TKT146
Nexperia USA Inc.
PDTB114ETR
NXP USA Inc.