DF200R12PT4B6BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 300A 1100W
$191.67
Available to order
Reference Price (USD)
6+
$184.75833
Exquisite packaging
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The DF200R12PT4B6BOSA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the DF200R12PT4B6BOSA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 1100 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
- Current - Collector Cutoff (Max): 15 µA
- Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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