DF80R12W2H3B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE
$34.90
Available to order
Reference Price (USD)
1+
$34.90000
500+
$34.551
1000+
$34.202
1500+
$33.853
2000+
$33.504
2500+
$33.155
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's DF80R12W2H3B11BOMA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the DF80R12W2H3B11BOMA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
IXYS
MWI25-12A7T
Microchip Technology
APTGT300A120G
Infineon Technologies
FF1000R17IE4DB2BOSA1
Infineon Technologies
FF150R12KE3GHOSA1
Infineon Technologies
BSM20GD60DLC
IXYS
MIXG490PF1200TSF
Infineon Technologies
FS35R12W1T7BOMA1
Infineon Technologies
BSM75GB120DN2_E3223C-SE
Infineon Technologies
FP50R12N2T7B11BPSA2
Infineon Technologies