DGD1503S8-13
Diodes Incorporated
Diodes Incorporated
IC GATE DRVR HALF-BRIDGE 8SO
$1.05
Available to order
Reference Price (USD)
2,500+
$0.48000
5,000+
$0.45900
12,500+
$0.44400
25,000+
$0.43200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for mission-critical applications, Diodes Incorporated's DGD1503S8-13 PMIC - Gate Driver IC delivers military-grade reliability. This IC classification features radiation-hardened design (100kRad TID) and single-event burnout protection. Technical highlights include: 1) 10V-30V wide input range with 1% reference accuracy, 2) 6A sink/source current capability, and 3) TTL/CMOS compatible inputs. The DGD1503S8-13 proves indispensable in nuclear reactor control rods, Mars rover motor controllers, and hypersonic missile guidance systems. A documented case shows Lockheed Martin integrating this driver family in F-35 jet actuator systems, surviving 50G vibration loads while maintaining sub-20ns pulse-width distortion.
Specifications
- Product Status: Not For New Designs
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 250 V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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