IR2125STRPBF
Infineon Technologies
Infineon Technologies
IC GATE DRVR HIGH-SIDE 16SOIC
$5.15
Available to order
Reference Price (USD)
1,000+
$2.42550
2,000+
$2.31000
Exquisite packaging
Discount
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Optimize your power systems with Infineon Technologies's IR2125STRPBF, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The IR2125STRPBF demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 0V ~ 18V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 1.6A, 3.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 500 V
- Rise / Fall Time (Typ): 43ns, 26ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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