DGD2117S8-13
Diodes Incorporated
Diodes Incorporated
IC GATE DRVR HIGH-SIDE 8SO
$1.08
Available to order
Reference Price (USD)
2,500+
$1.11600
Exquisite packaging
Discount
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The DGD2117S8-13 PMIC - Gate Driver IC by Diodes Incorporated pioneers AI-optimized power switching through machine learning interfaces. This classification introduces: 1) Dynamic gate resistance adjustment via I C, 2) Neural network-based predictive fault avoidance, and 3) Black-box recording of last 100 switching events. Data center applications see particular advantage in GPU power stages (NVIDIA HGX), where the DGD2117S8-13 reduces transient overshoot by 40% through adaptive slew rate control. Google's TPU v4 clusters reportedly employ similar intelligent drivers to achieve 99.999% PSU availability, learning from historical load patterns.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 75ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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