DGTD65T60S2PT
Diodes Incorporated
Diodes Incorporated
IGBT 600V-X TO247 TUBE 0.45K
$3.35
Available to order
Reference Price (USD)
450+
$3.88329
Exquisite packaging
Discount
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Upgrade your power management systems with the DGTD65T60S2PT Single IGBT transistor from Diodes Incorporated. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the DGTD65T60S2PT provides reliable and efficient operation. Diodes Incorporated's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose DGTD65T60S2PT for your critical power needs.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
- Power - Max: 428 W
- Switching Energy: 920µJ (on), 530µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 42ns/142ns
- Test Condition: 400V, 60A, 7Ohm, 15V
- Reverse Recovery Time (trr): 205 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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