DMC1030UFDB-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V 24V U-DFN2020-6
$0.14
Available to order
Reference Price (USD)
10,000+
$0.16176
Exquisite packaging
Discount
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Elevate your electronics with the DMC1030UFDB-13 from Diodes Incorporated, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the DMC1030UFDB-13 provides the reliability and efficiency you need. Diodes Incorporated's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V
- Power - Max: 1.36W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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