SI6968BEDQ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 5.2A 8-TSSOP
$0.82
Available to order
Reference Price (USD)
3,000+
$0.26374
6,000+
$0.24663
15,000+
$0.23807
30,000+
$0.23340
Exquisite packaging
Discount
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The SI6968BEDQ-T1-GE3 by Vishay Siliconix is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SI6968BEDQ-T1-GE3 provides reliable operation under stringent conditions. Vishay Siliconix's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A
- Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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