DMN67D8LDW-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT363
$0.07
Available to order
Reference Price (USD)
10,000+
$0.07056
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the DMN67D8LDW-13, a premium Transistors - FETs, MOSFETs - Arrays product from Diodes Incorporated. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the DMN67D8LDW-13 delivers consistent and reliable operation. Diodes Incorporated's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
- Power - Max: 320mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Microchip Technology
APTM50H14FT3G
Infineon Technologies
BSG0813NDIATMA1
Vishay Siliconix
SIR770DP-T1-GE3
onsemi
NVMD6N03R2G
Diotec Semiconductor
MMBT7002KW-AQ
Diodes Incorporated
DMN32D4SDW-13
Vishay Siliconix
SI5513CDC-T1-GE3
Diodes Incorporated
DMC25D1UVT-13
EPC
EPC2111
Diodes Incorporated