DMC3021LSDQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V 8.5A/7A 8-SO
$0.63
Available to order
Reference Price (USD)
2,500+
$0.27813
5,000+
$0.26207
12,500+
$0.24601
25,000+
$0.23477
Exquisite packaging
Discount
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Choose the DMC3021LSDQ-13 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMC3021LSDQ-13 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
- Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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