UPA1759G-E1-AT
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the UPA1759G-E1-AT from Renesas Electronics America Inc for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the UPA1759G-E1-AT stands out for its reliability and efficiency. Renesas Electronics America Inc's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 10V
- Power - Max: 2W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-PSOP
Related Products
Toshiba Semiconductor and Storage
SSM6L61NU,LF
Infineon Technologies
IRF9952TRPBF
onsemi
FDS8858CZ
Diodes Incorporated
DMN5L06DWK-7-01
Microchip Technology
MSCSM120AM16CT1AG
Advanced Linear Devices Inc.
ALD1117SAL
Fairchild Semiconductor
IRFN214BTA
Infineon Technologies
IRF7104TRPBF
Diodes Incorporated
DMN2053UVT-13
Toshiba Semiconductor and Storage